Physics-Based Parameter Extraction for InAs Colloidal Quantum Dot Photodiodes

Physics-Based Parameter Extraction for InAs Colloidal Quantum Dot Photodiodes

Bridge experiments and device simulation by extracting the key material parameters needed to build digital twins of quantum dot photodiodes.

Colloidal quantum dots are promising semiconductor materials for next‑generation short‑wave infrared (SWIR) photodetectors due to their low‑cost processing and tunable optoelectronic properties. However, accurately modeling these devices requires reliable material parameters that cannot be measured directly.

In this project, the student will combine optical and electrical characterization with physics‑based modeling to extract the key electronic properties of InAs colloidal quantum dot films. Time‑resolved photoluminescence (TRPL) and current–voltage (I–V) measurements will be analyzed using custom fitting algorithms, and the extracted parameters will be implemented in TCAD to develop predictive digital twins of quantum dot photodiodes. The project offers hands‑on experience in semiconductor characterization, scientific programming, numerical optimization, and device simulation.

Type of internship: Master internship

Duration: 6-12 months

Required educational background: Nanoscience & Nanotechnology, Electrotechnics/Electrical Engineering, Physics, Other

University promotor: Jan Genoe (KU Leuven)

The reference code for this position is 2026-INT-216.

Imec allowance will be provided for students studying at a non‑Belgian university.

For further information or for application, please contact Yigithan Mehmet Kose ( YigithanMehmet.Kose@imec.be ) and Wenya Song ( Wenya.Song@imec.be )

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