GaN Power Device Talent Community

Thank you for your interest in imec’s GaN Power Device talent community. We are looking for talented individual contributors at various experiences to help grow our activities in GaN power technology, including device engineering, reliability, electrical characterization, modeling, layout, and PDK development. This talent pool supports current and future openings within imec’s GaN Power Device team. The exact role and scope will be discussed during the interview process, based on your background, expertise, and interests. What you will do Gallium Nitride (GaN) power technology offers significant advantages over traditional silicon-based power devices. GaN technology provides higher efficiency, faster switching speeds, and the ability to operate at higher temperatures and voltages. This results in smaller, lighter, and more energy-efficient power systems. GaN devices are used in a variety of applications, including power supplies, electric vehicles, and renewable energy systems. They are particularly beneficial in high-voltage and high-power applications due to their low on-resistance and reduced system parasitic inductance. GaN HEMT devices are transforming power electronics, enabling more efficient and advanced systems. Imec has established enhancement-mode GaN technologies ranging from 40 V to 650 V, demonstrating excellent performance and reliability. At the same time, Imec is enabling GaN fabrication on 300 mm wafers, expanding its voltage range to both low
- and high-voltage domains, exploring advanced substrates, and developing new solutions for next-generation GaN power devices. Its research spans GaN epitaxy, processing technology, device engineering, reliability, design, layout, and PDK development. In this endeavor, we are seeking an enthusiastic GaN power technology specialist. Depending on

your profile
, you will contribute to one or more of the following areas:
• Device design and reliability
• Advanced electrical characterization
• TCAD simulations
• Compact modeling
• Layout
• PDK development Across all roles, you will:
• Collaborate closely with device, epitaxy, process integration, and device teams
• Contribute to GaN power technologies from early concepts and experiments to robust and manufacturable solutions
• Generate high-quality technical results, support publications and patents, and represent imec at relevant power electronics and semiconductor conferences
• Interact closely with industrial partners and customers to understand their requirements, support technical discussions, and help translate application needs into technology development priorities What we do for you

We offer
you the opportunity to join one of the world’s premier research centers in nanotechnology at its headquarters in Leuven, Belgium. With your talent, passion and expertise, you’ll become part of a team that makes the impossible possible. Together, we shape the technology that will define the society of tomorrow. We are committed to being an inclusive employer and proud of our open, multicultural, and informal working environment with ample possibilities to take initiative and show responsibility. We commit to supporting and guiding you in this process; not only with words but also with tangible actions. Through imec.academy, 'our corporate university', we actively invest in your development to further your technical and personal growth. We are aware that your valuable contribution makes imec a top player in its field. Your energy and commitment are therefore appreciated by means of a market appropriate salary with many fringe benefits. Who you are
• You have a master or higher degree in Electrical/Electronic Engineering or similar
• You have a solid background in semiconductor device physics
• You have strong knowledge in GaN HEMT device physics and operations
• Your knowledge of GaN processing and fabrication technologies is highly valued