Ferroelectric Hf₁₋ₓZrₓO₂ Materials for Energy-Efficient Memory and Edge AI Applications

Advance Hf₁₋ₓZrₓO₂ ferroelectric materials and interfaces for low-power memory technologies powering tomorrow's intelligent edge devices.

The rapidgrowth of Edge Artificial Intelligence (Edge AI), Internet-of-Things (IoT)devices, and data-centric computing is driving an urgent need for memorytechnologies that combine high performance with extremely low energyconsumption. Future computing systems require non-volatile memories capable ofreducing power delivery requirements while providing excellent scalability,endurance, and compatibility with advanced semiconductor manufacturing.

Ferroelectricmaterials based on Hf ₁₋ₓ Zr ₓ O ₂ (HZO) have emerged as leading candidates for next-generation memorytechnologies thanks to their CMOS compatibility, scalability to advancedtechnology nodes, and potential for low-voltage, energy-efficient operation.Continued advances in material engineering, electrode integration, andinterface optimization are critical for unlocking their full potential infuture memory and computing architectures.

During thisinternship, the student will contribute to the development of advancedHZO-based ferroelectric thin films and engineered interfaces for emergingmemory applications targeting energy-efficient computing and Edge AI hardware.The work will combine thin-film deposition, semiconductor processing, advancedmaterial characterization, and electrical evaluation of memory devices.

Thisproject offers a unique opportunity to perform cutting-edge research in aworld-leading semiconductor R&D environment while gaining hands-onexperience with state-of-the-art fabrication and characterization techniques.

ResearchActivities

The studentwill:

• Fabricateand optimize Hf ₁₋ₓ Zr ₓ O ₂ (HZO)-based ferroelectric thin films for memory applications.
• Investigatethe influence of electrodes and interfacial layers on ferroelectricproperties and device behavior.
• Studymaterial and interface engineering approaches enabling low-voltage andenergy-efficient memory operation.
• Performstructural, chemical, microstructural, and electrical characterization ofthin films and memory devices.
• Analyzecorrelations between material properties, processing conditions, andmemory performance.
• Contributeto the development of next-generation memory technologies for Edge AI andlow-power computing systems.

Type of internship: PhD internship, Master internship

Duration: 12 months

Required educational background: Nanoscience & Nanotechnology, Energy, Electrotechnics/Electrical Engineering, Chemistry/Chemical Engineering

University promotor: Jan Van Houdt (KU Leuven)

The reference code for this position is 2026-INT-285. Mention this reference code in your application.

Only for self-supporting students.

ProjectDescription

The rapidgrowth of Edge Artificial Intelligence (Edge AI), Internet-of-Things (IoT)devices, and data-centric computing is driving an urgent need for memorytechnologies that combine high performance with extremely low energyconsumption. Future computing systems require non-volatile memories capable ofreducing power delivery requirements while providing excellent scalability,endurance, and compatibility with advanced semiconductor manufacturing.

Ferroelectricmaterials based on Hf ₁₋ₓ Zr ₓ O ₂ (HZO) have emerged as leading candidates for next-generation memorytechnologies thanks to their CMOS compatibility, scalability to advancedtechnology nodes, and potential for low-voltage, energy-efficient operation.Continued advances in material engineering, electrode integration, andinterface optimization are critical for unlocking their full potential infuture memory and computing architectures.

During thisinternship, the student will contribute to the development of advancedHZO-based ferroelectric thin films and engineered interfaces for emergingmemory applications targeting energy-efficient computing and Edge AI hardware.The work will combine thin-film deposition, semiconductor processing, advancedmaterial characterization, and electrical evaluation of memory devices.

Thisproject offers a unique opportunity to perform cutting-edge research in aworld-leading semiconductor R&D environment while gaining hands-onexperience with state-of-the-art fabrication and characterization techniques.

ResearchActivities

The studentwill:

• Fabricateand optimize Hf ₁₋ₓ Zr ₓ O ₂ (HZO)-based ferroelectric thin films for memory applications.
• Investigatethe influence of electrodes and interfacial layers on ferroelectricproperties and device behavior.
• Studymaterial and interface engineering approaches enabling low-voltage andenergy-efficient memory operation.
• Performstructural, chemical, microstructural, and electrical characterization ofthin films and memory devices.
• Analyzecor