Low-Power HZO Ferroelectric Memory for Edge AI
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Imec is offering a 12-month PhD/Master internship focused on advancing Hf1−xZrxO2 (HZO) ferroelectric thin films and engineered interfaces for next-generation memory technologies. The research spans thin-film deposition, interfaces, and electrical evaluation of memory devices in a world-leading semiconductor R&D environment.
The program targets Edge AI hardware and energy-efficient computing, with opportunities to work on cutting-edge processing, materials engineering, and characterization
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Vlaams-Brabant, Vlaams-Brabant, Belgique Imec Temps plein 11 000 € - 16 000 € ContratAdvance Hf₁₋ₓZrₓO₂ ferroelectric materials and interfaces for low-power memory technologies powering tomorrow's intelligent edge devices. The rapidgrowth of Edge Artificial Intelligence (Edge AI), Internet-of-Things (IoT)devices, and data-centric computing is driving an urgent need for memorytechnologies that combine high performance with extremely...